| C3H8-SiCl4-H2 시스템에서의 탄화 실리콘 증착에 대한 열역학적인 해석 |
| 김준우, 정성민1, 김형태, 김경자, 이종흔2, 최균 |
한국세라믹기술원 이천분원
1한국세라믹기술원 기업지원본부
2고려대학교 재료공학과 |
| Thermodynamic Prediction of SiC Deposition in C3H8-SiCl4-H2 System |
| Jun-Woo Kim, Seong-Min Jeong1, Hyung-Tae Kim, Kyung-Ja Kim, Jong-Heun Lee2, Kyoon Choi |
KICET Icheon Branch, Korea Institute of Ceramic Engineering and Technology
1Business Support Division, Korea Institute of Ceramic Engineering and Technology
2Department of Material Science and Engineering, Korea University |
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| ABSTRACT |
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In order to deposit a homogeneous and uniform ${beta}$-SiC films by chemical vapor deposition, we demonstrated the phase stability of ${beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure, temperature and gas composition as variables. The ${beta}$-SiC predominant region over other solid phases like carbon and silicon was changed gradually and consistently with temperature and pressure. Practically these maps provide necessary conditions for homogeneous ${beta}$-SiC deposition of single phase. With the thermodynamic analyses, the CVD apparatus for uniform coating was modeled and simulated with computational fluid dynamics to obtain temperature and flow distribution in the CVD chamber. It gave an inspiration for the uniform temperature distribution and low local flow velocity over the deposition chamber. These calculation and model simulation could provide milestones for improving the thickness uniformity and phase homogeneity. |
| Key words:
Silicon carbide, CVD, Thermodynamic calculation, CFD, Simulation |
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