| Physical and Dielectric Properties of Aluminoborosilicate-Based Dielectrics Containing Different Divalent Oxides |
| Dong-Wook Shin, Viswanathan S. Saji, Ravindra K. Gupta, Yong-Soo Cho |
| Department of Materials Science and Engineering, Yonsei University |
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| ABSTRACT |
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The variations of physical and dielectric properties of low temperature dielectrics based on typical aluminoborosilicate glasses modified with several divalent oxides were investigated. The divalent oxides studied here included CaO, MgO, BaO, SrO and ZnO. All samples containing either 35 wt% or 45 wt% alumina filler were prepared at the same processing condition and then fired at $850^{circ}C$ for 30 min. The resultant characteristics of fired samples depended on the choice of the divalent ion and the content of the alumina filler. Except for the ZnO modification, all other samples containing 35 wt% filler demonstrated promising densification as they exhibited reasonably high densities of 3.07-3.31 $g/cm^3$ and high shrinkages of 14.0-16.4%. Particularly, the sample containing ZnO was distinguished with large variations compared to the base sample, which can be highlighted with earlier densification and crystallization at unexpectedly low temperatures. The negative effects of the ZnO modification on densification and dielectric properties were thought to be associated with earlier crystallization potentially by influencing effective densification via viscous flow. As an optimum composition, the sample containing only CaO showed the most promising characteristics such as $k{sim}8.05$ and $tan{delta}{sim}0.0018$ when 35 wt% alumina filler was used. |
| Key words:
Dielectric, LTCC, Aluminoborosilicate, Crystallization |
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