| 이중 이온빔으로 제작한 Ta2O5 박막의 기판 온도 및 보조 이온빔 에너지에 따른 굴절률과 판류응력의 변화 |
| 윤석규, 김용탁, 김회경1, 김명진1, 이형만1, 윤대호 |
성균관대학교 신소재공학과
1전자부품연구원 광부품연구센터 |
| Change of Refractive Index and Residual Stresses of Ta2O5 Thin Film Prepared by Dual Ion Beam Sputtering Deposition as the Substrate Temperature and Assist ion Beam Energy |
| Seok-Gyu Yeon, Yong-Tak Kim, Hwek-Yung Kim1, Myoung-Jin Kim1, Hyung-Man Lee1, Dae-Ho Yoon |
Department of Advanced Materials Engineering, Sungkyunkwan University
1Optical Telecommunication Research Center, Korea Electronics Technology Institute |
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| ABSTRACT |
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The optical properties and intrinsic stress of $Ta_{2}O_{5}$ thin films deposited by Dual ion-Beam Sputtering: (DIBS) and Single ion-Beam Sputtering (SIBS) were studied as a function of the substrate temperature and assist ion beam voltage. The refractive index showed the maximum value (n = 2.144) at $150^{circ}C$ in the SIBS process. When the substrate temperature has above $150^{circ}C$ in the SIBS process the refractive index decreased. In the DIBS process, the increase of the substrate temperature affected the increase of the refractive index at a maximum value (n = 2.1117, at $200^{circ}C$). The low temperature process $(<100^{circ}C)$ can greatly reduce residual stress with the assist ion gun, but the high temperature process was unaffected. As the assist ion beam voltage increase from 250 to 350 V the refractive index increased to 2.185. However, the refractive index was decreased at the range of 350-650 V, As the assist ion beam voltage increased, the stress of the deposited film decreased to 0.1834 GPa at 650 V. |
| Key words:
Dual ion beam sputtering, Refractive index, Intrinsic stress, Ion beam voltage |
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