| Effects of Oxygen Pressure on the Crystallization Behavior and Electrical Properties of YMnO3 Thin Films |
| Chae-Il Cheon, Kwi-Young Yun, Jeong-Seog Kim, Jin-Hyeok Kim1 |
Department of Materials Science and Engineering, Hoseo Chungnam
1Department of ceramic Engineering, Chonnam National University |
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| ABSTRACT |
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The YMnO$_3$ thin films were prepared on platinized-silicon substrates by chemical solution deposition and annealed at 750 to 85$0^{circ}C$ for 1 h under various oxygen pressures, from 2 mTorr to 760 Torr. Effects of annealing oxygen pressures on the crystallization behavior and electrical properties of YMnO$_3$ thin films were investigated. Crystallinity and c-axis preferred orientation of YMnO$_3$ thin film were improved by decreasing the oxygen pressure but were deteriorated at extremely low oxygen pressure, 2 mTorr. Leakage current density of the YMn03 thin film decreased as the oxygen pressure decreased. The film annealed at 80$0^{circ}C$ under 2 Torr, which had the best crystallinity and the highest c-axis preferred orientation. showed the best-developed ferroelectric C-V hysteresis. 잖⨀ 졧ﺖ⨀ 줏 덐 |
| Key words:
Ferroelectric properities, Annealing, $YMnO_3$, Chemicalsolution deposition |
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