Growth of Heteroepitaxial ZnO Thin Film by Off-axis RF Magnetron Sputtering

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doi:2003.40.3.262

J. Korean Ceram. Soc. > Volume 40(3); 2003 > Article

Journal of the Korean Ceramic Society 2003;40(3): 262.
doi: https://doi.org/10.4191/kcers.2003.40.3.262

Off-axis 고주파 마그네트론 스퍼터링법을 이용한 이종에피텍셜 ZnO 박막 성장

박재완, 박종완¹, 이전국²

한국과학기술연구원 박막재료연구센터, 한양대학교 재료공학과
¹한양대학교 재료공학과
²한국과학기술연구원 박막재료연구센터

Growth of Heteroepitaxial ZnO Thin Film by Off-axis RF Magnetron Sputtering

ABSTRACT

The heteroepitaxial ZnO thin film on sapphire (0001) substrate was prepared by an off-axis Radio Frequency(RF) magnetron sputtering. The crystallinity of ZnO thin film was affected by deposition pressure, RF power, and substrate temperature. High quality heteroepitaxial ZnO thin film was obtained when the kinetic energy of sputtered particles is well harmonized with the surface mobility. In the result of Photoluminescence(PL) of heteroepitaxial ZnO thin film, Ultraviolet(UV) emissions at 3.36 and 3.28 eV were observed at low(17 K) and Room Temperature(RT). respectively. As the ZnO thin film was annealed in O$_2$ambient, the crystallinity was improved while UV emission was drastically decreased.

Key words: Heteroepitaxial, ZnO, Off-axis, Photoluminescence, Ultraviolet emission