<TEX>$beta$</TEX>-SiC Formation Mechanisms in Si Melt-C-SiC System

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J. Korean Ceram. Soc. > Volume 36(6); 1999 > Article

Journal of the Korean Ceramic Society 1999;36(6): 655.

용융 Si-C-SiC계에서 $beta$-SiC 생성기구

서기식, 박상환, 송휴섭

한국과학기술연구원 재료연구부

$beta$-SiC Formation Mechanisms in Si Melt-C-SiC System

ABSTRACT

${beta}$-SiC formation mechanism in Si melt-C-SiC system with varying in size of carbon source was investigated. A continuous reaction sintering process using Si melt infiltration method was adopted to control the reaction sintering time effectively. It was found that ${beta}$-SiC formation mechanism in Si melt-C-SiC system was directly affected by the size of carbon source. In the Si melt-C-SiC system with large carbon source ${beta}$-SiC formation mechanism could be divided into two stages depending on the reaction sintering time: in early stage of reaction sintering carbon dissolution in Si melt and precipitation of ${beta}$-SiC was occurred preferentially and then SIC nucleation and growth was controlled by diffusion of carbon throughy the ${beta}$-SiC layer formed on graphite particle. Furthmore a dissolution rate of graphite particles in Si melt could be accelerated by the infiltration of Si melt through basal plane of graphite crystalline.

Key words: Si melt infultration, Reaction bonded SIC, RBSC, SiC formation mechaism, Residual graphite