Effect of Selenization Pressure on the properties of <TEX>$CuInSe_2$</TEX> Thin Films

,; ,; ,; ,; ,; ,; ,; ,

J. Korean Ceram. Soc. > Volume 35(8); 1998 > Article

Journal of the Korean Ceramic Society 1998;35(8): 871.

Selenization 압력이 $CuInSe_2$ 박막의 특성에 미치는 영향

김상덕, 김형준, 송진수¹, 윤경훈¹

서울대학교 재료공학부
¹한국에너지기술연구소

Effect of Selenization Pressure on the properties of $CuInSe_2$ Thin Films

ABSTRACT

$CuInSe_2$ thin films have been formed by two-step method in which Cu-In alloy layer was first deposited and then it was selenized. Cu-In alloy layers were deposited by co-sputtering method at ambient tem-perature. XRD analysis showed that both of $Cu_{11}In_{9}$ and CuIn$_2$ phases were formed from these films. $Cu_{11}In_{9}$ peak intensity was increased increased with varying the composition from In-rich to Cu-rich. The metallic layers were selenized either in low pressure of 10 mTorr or in atmospheric pressure(AP) Less compounds of Cu-Se and In-Se were observed during the early stage of selenization and also $CuInSe_2$ thin films selenized in vacuum showed lower roughness larger grain size and better crystallinity than those in AP.

Key words: $CuInSe_2$, Selenization, Co-sputtering