Processing and Characterization of a Direct Bonded SOI using SiO<TEX>$_2$</TEX> Thin Film

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J. Korean Ceram. Soc. > Volume 35(6); 1998 > Article

Journal of the Korean Ceramic Society 1998;35(6): 535.

SiO$_2$ 박막을 이용한 SOI 직접접합공정 및 특성

신동운, 최두진, 김긍호¹

연세대학교 세라믹공학과
¹한국과학기술연구원

Processing and Characterization of a Direct Bonded SOI using SiO$_2$ Thin Film

ABSTRACT

SOI(silicon oninsulator) was fabricated through the direct bonding of a hydrophilized single crystal Si wafer and a thermally oxidized SiO2 thin film to investigate the stacking faults in silicon at the Si/SiO2 in-terface. At first the oxidation kinetics of SiO2 thin film and the stacking fault distribution at the oxidation interface were investigated. The stacking faults could be divided into two groups by their size and the small-er ones were incorporated into the larger ones as the oxidation time and temperature increased. The den-sity of the smaller ones based critically lower eventually. The SOI wafers directly bonded at the room temperature were annealed at 120$0^{circ}C$ for 1 hour. The stacking faults at the bonding and oxidation interface were examined and there were anomalies in the distributions of the stacking faults of the bonded region to arrange in ordered ring-like fashion.

Key words: SOI(silicon on insulator), Direct Bonding, SC-1, OSF (oxidation induced staking fault)