Doping and Annealing Effect on Luminescent Characteristics of <TEX>$_2$</TEX> Phosphor Thin Films

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J. Korean Ceram. Soc. > Volume 35(6); 1998 > Article

Journal of the Korean Ceramic Society 1998;35(6): 619.

ZnGa$_2$O$_4$형광박막의 발광특성에 미치는 도핑 및 어닐리의 효과

정영호, 정승묵, 김석범¹, 김영진

경기대학교 재료공학과
¹경기대학교 재료공학

Doping and Annealing Effect on Luminescent Characteristics of $_2$ Phosphor Thin Films

ABSTRACT

Mn doped {{{{ {Zn {Ga }_{2 }O }_{4 } }} thin film phosphors were prepared on Si(100) wafers and ITO coated glass substrates by rf magnetron sputtering technique and the effects of the substrates dopant and the sputtering paramet-ers were analyzed, Changes of the oreintation were observed after annealine tratment. The grain size of {{{{ {Zn {Ga }_{2 }O }_{4 } }} : Mn thin film deposited on Si wafer was smaller than that on ITO/glass substrate which resulted in higher PL intensity. The PL spectra of Mn doped {{{{ {Zn {Ga }_{2 }O }_{4 } }} thin films showed sharp green luminescence spec-trum. According to CL spectrum it could be concluded that Mn ions acted as an actuator for green emission by substituting Zn atom sites.

Key words: ZnGa$_2$O$_4$, phosphor, Thin film, Mn doping, Annealing, Luminescence