Effect of WSi<TEX>$_2$</TEX>  Gate Electrode on Thin Oxide Properties in MOS Device

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J. Korean Ceram. Soc. > Volume 35(3); 1998 > Article

Journal of the Korean Ceramic Society 1998;35(3): 259.

MOS 소자에서 WSi$_2$ 게이트 전극이 Thin Oxide 성질에 미치는 영향

박진성, 이현우, 김갑식¹, 문종하², 이은구

조선대학교 재료공학과
¹영흥개발 부설연구소
²전남대학교 무기재료공학과

Effect of WSi$_2$ Gate Electrode on Thin Oxide Properties in MOS Device

Key words: Thin oxide, WSi2 electrode, MOS device, Oxide reliability

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