Preparation of Ferroelectric <TEX>$BaTiO_3$</TEX> Thin Films on MgO-Buffered Si Substrates

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J. Korean Ceram. Soc. > Volume 34(4); 1997 > Article

Journal of the Korean Ceramic Society 1997;34(4): 373.

MgO 완충층을 이용한 Si 기판상 강유전체 $BaTiO_3$ 박막의 제조

김상섭

순천대학교 금속공학고, 무기재료분야

Preparation of Ferroelectric $BaTiO_3$ Thin Films on MgO-Buffered Si Substrates

ABSTRACT

A study on the deposition and characterization of BaTiO3 thin films on MgO-buffered Si(100) substrates by sputtering was conducted. The MgO buffer layers were investigated as a function of deposition temperature. At lower substrate temperature, the MgO layers were not fully crystalline, but a crystallized MgO layer with (001) preferred orientation was obtained at the substrate temperature of $700^{circ}C$. Partially (00ι) or (h00) textured BaTiO3 films were obtained on Si(100) with the MgO buffer layer grown at 700ι. While, randomly oriented BaTiO3 films with large-scale cracks on the surface were made without the MgO layer. The crystallographic orientation, morphology and electrical properties between the BaTiO3 films on Si with and without the MgO layer were compared using the BaTiO3 film on MgO(100) single crystal substrate as a reference system. Also the favorable role of the MgO layer as a buffer for growing of oriented BaTiO3 films on Si substrates was confirmed.

Key words: Buffer layer, $BaTiO_3$ film, MgO film, Ferroelectric thin film, Sputtering