Preparation of ATO Thin Films by DC Magnetron Sputtering (II)Electrical Properties

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J. Korean Ceram. Soc. > Volume 33(5); 1996 > Article

Journal of the Korean Ceramic Society 1996;33(5): 514.

DC Magnetron Sputtering에 의한 ATO 박막의 제조(II)전기적 특성

윤천, 이혜용, 정윤중¹, 이경희¹

삼성코닝연구소
¹명지대학교 무기재료공학과

Preparation of ATO Thin Films by DC Magnetron Sputtering (II)Electrical Properties

ABSTRACT

Sb doped SnO2(ATO: Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using an oxide target and the electrical characteristics of ATO films were investigated. The experimen-tal conditions are as follows :Ar flow rate ; 0~100 sccm deposition tempera-ture ; 250~40$0^{circ}C$ DC sputter powder ; 150~550W and sputteing pressure ; 2~7 mTorr, The thickness of depositied ATO films were 600$AA$~1100 $AA$ ranges. The resistivity of ATO films was decreased due to the increase of the crystallinity of ATO films with deposition temperature. The decrease of carrier concentration of films with the increase of oxygen flow rate and working pressure is responsible for the increase of resistivity. Increasing of sputtering power raised the resistivity of films by decreasing the carrier mobility.

Key words: DC magnetron sputtering