Preparation and Electrical Properties of <TEX>$SrTiO_3$</TEX> Thin Films by Plasma Enhanced Metal Organic Chemical vapor Deposition

,; ,; ,; ,

J. Korean Ceram. Soc. > Volume 33(2); 1996 > Article

Journal of the Korean Ceramic Society 1996;33(2): 177.

PE-MOCVD에 의한 $SrTiO_3$ 박막의 제조 및 전기적 특성에 관한 평가

김남경, 윤순길

충남대학교 재료공학과

Preparation and Electrical Properties of $SrTiO_3$ Thin Films by Plasma Enhanced Metal Organic Chemical vapor Deposition

ABSTRACT

strontium titanate (SrTiO3) thin films deposited on Pt/MgO were prepared by Plasma Enhanced Metal Orgainc Chemical vapor Deposition (Pe-MOCVD). The crystallinity of SrTiO3 thin films increased with increasing depo-sition temperature and SrF2 second phase disappeared at 55$0^{circ}C$ The films showed a dielectric constant of 177 and a dissipation factor of 0.0195 at 100 kHz. The variation of capacitance of the films with applied voltage was small showing paraelectric properties. The charge storage density and leakage current density were 40fC/${mu}{textrm}{m}$2 and 3.49$times$10-7 A/cm2 at 0.25 MV/cm, respectively.

Key words: PE-MOCVD, $SrTiO_3$, Dielectric constant, Paraelectric thin film, Leakage current, Schottky emission