Control of Residual Stress in Diamond Film Fabricated by Hot Filament CVD

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J. Korean Ceram. Soc. > Volume 32(7); 1995 > Article

Journal of the Korean Ceramic Society 1995;32(7): 793.

열 필라멘트 CVD법에 의해서 제작한 다이아몬드 막의 잔류응력제어

최시경, 정대영, 최한메

한국과학기술원 재료공학과

Control of Residual Stress in Diamond Film Fabricated by Hot Filament CVD

ABSTRACT

e hot filament CVD was studied, and it was confirmed that the tensile intrinsic stresses in the films could be controlled without any degradation in the quality of the diamond films. The tensile intrinsic stresses in the films decreased from 2.97 to 1.42 GPa when the substrate thickness increased from 1 to 10mm. This result showed that the residual stress was affected by the substrate thickness as well as by the interaction between grains. Applying of ＋50 V between the W filament and the Si substrate during deposition, the tensile intrinsic stress in the film deposited at 0 V was decreased from 2.40 GPa to 0.71 GPa. Such large decrease in the tensile intrinsic stress was due to $beta$-SiC which acted as a buffer layer for the stress relaxation. However, the application of the large voltage above ＋200V resulted in the change of quality of the diamond film, and nearly had no effect on relaxation in the tensile intrinsic stress.

Key words: Diamond film, Intrinsic stress, Buffer layer, Relaxation, ${\beta}$-SiC