<TEX>$TiO_2$</TEX> Doped Sapphire Single Crystal Growth by Verneuil Method and Study for Defects

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J. Korean Ceram. Soc. > Volume 31(12); 1994 > Article

Journal of the Korean Ceramic Society 1994;31(12): 1423.

Verneuil법에 의한 $TiO_2$를 첨가한 Sapphire 단결정 성장과 결함에 관한 연구

조현, 최종건, 전병식, 오근호, 박한수¹

한양대학교 공과대학 무기재료공학과
¹홍익대학교 과학기술대학 무기재료공학과

$TiO_2$ Doped Sapphire Single Crystal Growth by Verneuil Method and Study for Defects

ABSTRACT

TiO2 doped sapphire single crystals were grown by Verneuil method. The doping amount of TiO2 to Al2O3 were varied 0.1, 0.2, 0.3 wt% respectively. The grown crystals have reddish color and somewhat transparent. Optimum growth condition was established by changing growth rate and gas flow ratio. Growth condition are as follows; The flow rate range of oxygen ws 5.0~7.3 ι/min and that of hydrogen was 16~25ι/min and average growth rate was 6~8mm/hr. The basic cause of color appearence and defects in crystal were studied.