|
|
Journal of the Korean Ceramic Society 1993;30(2): 107. |
전자장치용 Passivation 유리의 결정화에 관한 연구 |
손명모, 박희찬1, 이헌수 |
대구공업전문대학 요업과 1부산대학교 무기재료공학과 |
Crystallization of Passivation Glass for Electronic Devices |
|
|
|
|
|
ABSTRACT |
Zinc-Borosilicate(ZnO 65.0wt%, B2O3 21.5wt%, SiO2 9.0wt%, PbO or tiO2 4wt%) passivation glasses were studied using differential thermal analysis(DTA), scanning electron microscopy(SEM) observations, X-ray diffraction (XRD) patterns and measurement of thermal expansion coefficients. Passivation glasses containing 4wt% TiO2 and 4wt% PbO had crystallization temperature of 680~73$0^{circ}C$ and major crystalline phases were identified by X-ray diffraction as $alpha$-ZnO.B2O3 and $alpha$-5ZnO.2B2O3. As increasing firing temperature, the size of crystalline phases increased by observation of SEM. The thermal expansion coefficient of crystallized glass frits was smaller than that of unfired glass. |
|
|
|