Electrical Behaviors of SnO2 Thin Films in Hydrogen Atmosphere

,; ,; ,; ,

J. Korean Ceram. Soc. > Volume 25(4); 1988 > Article

Journal of the Korean Ceramic Society 1988;25(4): 341.

수소가스분위기하에서의 SnO2 박막의 전기적 거동

김광호, 박희찬

부산대학교 무기재료공학과

Electrical Behaviors of SnO2 Thin Films in Hydrogen Atmosphere

ABSTRACT

Thin films of tin-oxide were prepared by chemical vapor deposition technique using the direct of SnCl4. Resistivity and carrier concentration of deposited SnO2 thin film were measured by 4-point probe method and Hall effect measurement. The results showed the remarkable dependence of electrical properties on the deposition temperature. As the deposition temperature increased, resistivity of deposited film initially decreased to a minimum value of ~10-3$Omega$cm at 50$0^{circ}C$, and then rapidly increased to ~10$Omega$cm at $700^{circ}C$. Electrical conductance of these films was measured in exposure to H2 gas. It was found that gas sensitivity was affected combination of film thickness and intrinsic resistivity of deposited film. Gas sensitivity increased with decrease of film thickness. Fairly high sensitivity to H2 gas was obtained for the film deposited at $700^{circ}C$. Optimum operation temperature of sensing was 30$0^{circ}C$ for H2 gas.