| CMP 공정에서 슬러리와 웨이퍼 형상이 SiC 웨이퍼 표면품질에 미치는 영향 |
| 박종휘, 양우성, 정정영, 이상일, 박미선, 이원재, 김재육1, 이상돈1, 김지혜1 |
동의대학교 융합부품공학과
1쌍용멀티리얼 (주) |
| The Effect of Slurry and Wafer Morphology on the SiC Wafer Surface Quality in CMP Process |
| Jong-Hwi Park, Woo-Sung Yang, Jung-Young Jung, Sang-Il Lee, Mi-Seon Park, Won-Jae Lee, Jae-Yuk Kim1, Sang-Don Lee1, Ji-Hye Kim1 |
Electronic Ceramics Center (ECC), Department of Materials and Components Engineering, Dong-Eui University
1R&D Center for Advanced Materials, SsangYong Materials Corp. |
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| ABSTRACT |
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The effect of slurry composition and wafer flatness on a material removal rate (MRR) and resulting surface roughness which are evaluation parameters to determine the CMP characteristics of the on-axis 6H-SiC substrate were systematically investigated. 2-inch SiC wafers were fabricated from the ingot grown by a conventional physical vapor transport (PVT) method were used for this study. The SiC substrate after the CMP process using slurry added oxidizers into slurry consisted of KOH-based colloidal silica and nano-size diamond particle exhibited the significant MRR value and a fine surface without any surface damages. SiC wafers with high bow value after the CMP process exhibited large variation in surface roughness value compared to wafer with low bow value. The CMPprocessed SiC wafer having a low bow value of 1im was observed to result in the Root-mean-square height (RMS) value of 2.747 A and the mean height (Ra) value of 2.147 A. |
| Key words:
CMP, 6H-SiC, PVT, KOH-based colloidal silica |
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