| Structural and Electrical Properties of WOx Thin Films Deposited by Direct Current Reactive Sputtering for NOx Gas Sensor |
| Young-Soo Yoon, Tae-Song Kim1, Won-Kook Park2 |
Department of Advanced Fusion Technology(Optical Microwave Thin Film Center), Konkuk University
1Microsystem Research Center, Korea Institute of Science and Technology
2Thin Film Materials Research Center, Korea Institute of Science and Technology |
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| ABSTRACT |
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W $O_{x}$-based semiconductor type thin film gas sensor was fabricated for the detection of N $O_{x}$ by reactive d.c. sputtering method. The relative oxidation state of the deposited W $O_{x}$ films was approximately compared by the calculation of the difference of the binding energy between Ols to W4 $f_{7}$2/ core level XPS spectra in the standard W $O_3$ powder of known composition. As the annealing temperature increased from 500 to 80$0^{circ}C$, relative oxygen contents and grain size of the sputtered films were gradually increased. As the results of sensitivity ( $R_{gas}$/ $R_{air}$) measurements for the 5 ppm N $O_2$ gas, the sensitivity was 110 and the sensor showed recovery time as fast as 200 s. The other sensor properties were examined in terms of surface microstructure, annealing temperature, and relative oxygen contents. These results indicated that the W $O_3$ thin film with well controlled structure is a good candidate for monitoring and controlling of automobile exhaust.haust.t.t.t. |
| Key words:
$WO_{x}$ x/, Thin film, Semiconductor type sensor, $NO_{x}$, Sensitivity |
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