| 졸-겔법에 의해 제조된 Al-Doped ZnO 박막의 후열처리 온도에 따른 전기 및 광학적 특성 |
| 고석배, 최문순, 고형덕, 이충선1, 태원필2, 서수정, 김용성 |
성균관대학교 정보통신용 신기능성 소재 및 공정연구센터
1아주대학교 물리학과
2인하대학교 소재연구소 |
| Optical and Electrical Properties with Various Post-Heating Temperatures in the Al-Doped ZnO Thin Films by Sol-Gel Process |
| Seok-Bae Ko, Moon-Sun Choi, Hyungduk Ko, Chung-Sun Lee1, Weon-Pil Tai2, Su-Jeong Suh, Young-Sung Kim |
Advanced Material Process of Information Technology, Sungkyunkwan University
1Department of Physics, Ajou University
2Institute of Advanced Materials, Inha University |
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| ABSTRACT |
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Isopropanol of low boiling point was used as a solvent to prepare Al-doped ZnO(AZO) thin films. A homogeneous and stable sol was made from Zn acetate a solute whose mole concentration was 0.7mol/$iota$ and Al chloride as a dopant. Al-doped ZnO thin films were prepared by sol-gel method as a function of post-heating temperature from 500 to $700^{circ}C$ and the optical and electrical properties were investigated. The c-axis orientation along (002) plane was enhanced with the increasing of post-heating temperature and the surface morphology of the films showed a homogeneous and nano-sized microstructure. The optical transmittance of the films post-heated below $650^{circ}C$ was over $86%$, but decreased at $700^{circ}C$. The electrical resistivity of the thin films decreased from 73 to 22 $Omega$-cm as the post-heating temperature increased up to $650^{circ}C$, but increased greatly to 580 $Omega$-cm at $700^{circ}C$. XPS analysis indicated that the deterioration of electrical and optical properties was attributed to the precipitation of $Al_2O_3$ phase on the surface of AZO thin film. This result suggests that the optimum post-heating temperature to improve electrical and optical properties is $600^{circ}C$. |
| Key words:
Al-doped ZnO(AZO), Sol-gel method, Electrical properties, Optical properties |
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